PART |
Description |
Maker |
SST29LE010-150-4C-NHE CAT25C33Y20 GLS29EE512-70-4I |
EEPROM 128K X 8 150ns EEPROM (4kx8) 32K 2.5-6.0 EEPROM 64K X 8 70ns EEPROM 128K X 8 70ns 16Kb Add-Only Memory 16K X 1 OTPROM, PDSO6
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Silicon Storage Technology, Inc. Advanced Semiconductor, Inc. Maxim Integrated Products
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CY14B104NA-ZSP20XCT CY14B104NA-ZSP20XIT CY14B104LA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 256K X 16 NON-VOLATILE SRAM, 20 ns, PDSO54 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
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Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
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X2784AG-08TT I2781A-08SR I2781A-08ST I2781A-08TR I |
PS MEDICAL SWITCHER 15V .73A 156 MHz, OTHER CLOCK GENERATOR, PDSO8 General Purpose EMI Reduction IC 156 MHz, OTHER CLOCK GENERATOR, PDSO8 General Purpose EMI Reduction IC 312 MHz, OTHER CLOCK GENERATOR, PDSO8 General Purpose EMI Reduction IC 78 MHz, OTHER CLOCK GENERATOR, PDSO8 PS LINEAR DUAL 5V@6A 9-15@2.5A ICs for Inductive Proximity Switches; Package: P-DSO-14; VCC (min): 5.0 V; VCC (max): 30.0 V; ICC (max): 0.9 mA; IQ (max): 50.0 mA; Operating Temperature (min): -25.0 degC; ICs for Inductive Proximity Switches; VCC (min): 5.0 V; VCC (max): 30.0 V; ICC (max): 0.9 mA; IQ (max): 50.0 mA; Operating Temperature (min): -25.0 degC; ICs for Inductive Proximity Switches; Package: P-DSO-8; VCC (min): 5.0 V; VCC (max): 30.0 V; ICC (max): 1.0 mA; IQ (max): 50.0 mA; Operating Temperature (min): -25.0 degC; ICs for Inductive Proximity Switches; Package: P-DSO-8; VCC (min): 5.0 V; VCC (max): 30.0 V; ICC (max): 1.0 mA; IQ (max): 50.0 mA; Operating Temperature (min): -25.0 degC;
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Alliance Semiconductor ... Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation] http://
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HY62256A HY62256AJ HY62256AJ-I HY62256ALJ HY62256A |
32Kx8bit CMOS SRAM, standby current=25uA, 70ns 32Kx8bit CMOS SRAM, standby current=25uA, 55ns 32Kx8bit CMOS SRAM, standby current=25uA, 85ns 32Kx8bit CMOS SRAM, standby current=100uA, 70ns 32Kx8bit CMOS SRAM, standby current=100uA, 85ns 32Kx8bit CMOS SRAM, standby current=1mA, 70ns 32Kx8bit CMOS SRAM, standby current=1mA, 85ns 32Kx8bit CMOS SRAM, standby current=1mA, 55ns 32Kx8bit CMOS SRAM 32Kx8bit CMOS SRAM Circular Connector; No. of Contacts:22; Series:MS27497; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No 32Kx8bit CMOS SRAM JT 22C 22#22D SKT RECP 32Kx8bit CMOS SRAM
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Hynix Semiconductor, Inc. Hynix Semiconductor Inc. ETC HYNIX[Hynix Semiconductor] http://
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APT19F100J |
1000V, 19A, 0.46Ω Max, trr ?70ns
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Microsemi Corporation
|
SPJ400F |
High Voltage Rectifier Stacks 50mA ?70ns ?Axial Leaded
|
Voltage Multipliers Inc...
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M4-128/64-18VI M4-128/64-18YI M4-128N/64-18JI M4LV |
High Performance E 2 CMOS In-System Programmable Logic High-performance E2CMOS in-system programmable logic, 3.3V Vcc, 128 macrocells, 64 I/Os, 14ns High-performance E2CMOS in-system programmable logic, 5V Vcc, 128 macrocells, 64 I/Os, 14ns High-performance E2CMOS in-system programmable logic, 3.3V Vcc, 192 macrocells, 96 I/Os, 14ns High-performance E2CMOS in-system programmable logic, 5V Vcc, 256 macrocells, 128 I/Os, 14ns High-performance E2CMOS in-system programmable logic, 3.3V Vcc, 256 macrocells, 128 I/Os, 14ns
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Lattice Semiconductor
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PMO-4530PN-47UQ |
Sensitivity Range -47 ± 3 dB RL = 2.2 k Vcc = 2.0v
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Mallory performance clu...
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MU9C1965L-50TCC MU9C1965A-12TCC MU9C1965A-90TCC MU |
70ns 3.3V 128 x 1024bit LANCAM MP 120ns 5.0V 128 x 1024bit LANCAM MP 90ns 5.0V 128 x 1024bit LANCAM MP 70ns 5.0V 128 x 1024bit LANCAM MP 50ns 5.0V 128 x 1024bit LANCAM MP
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MUSIC Semiconductors
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PMO-4015MN-42HXQ |
Sensitivity Range -42 ± 2 dB RL = 2.2 k Vcc = 2.0v (1 kHz 0 dB = 1 v/Pa)
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Mallory performance clu...
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MX25R1035F |
Wide Vcc Range, 1M-BIT
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Macronix International
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